Transistor: N-Mosfet; Unipolar; 20V; 1A; 0,29W;

Description: Transistor: N-Mosfet; Unipolar; 20V; 1A; 0,29W;The description of this item has been automatically translated. If you have any questions, please feel free to contact us.Transistor:N-MOSFET;unipolar;20V;1A;0.29W;SOT323DMG1012UW-7N Channel Transistors Technical specificationsManufacturer: DIODES INCORPORATEDTransistor type: N-MOSFETPolarization: unipolarDrain-source voltage: 20VDrain current: 1APower dissipation: 0.29WCase: SOT323Gate-Source Voltage: ±6VResistance in line state: 0.3ΩMounting: SMDPacking Type: BPacking Type: RollChannel Type: StrongProperties of semiconductor elements: protected gateScope of delivery: 5 pcs.Transistor:N-MOSFET;unipolar;20V;1A;0.29W;SOT323DMG1012UW-7N Channel Transistors Technical specifications Manufacturer: DIODES INCORPORATED Transistor type: N-MOSFET Polarization: unipolar Drain-source voltage: 20V Drain current: 1A Power dissipation: 0.29W Case: SOT323 Gate-Source Voltage: ±6V Resistance in line state: 0.3Ω Mounting: SMD Packing Type: B Packing Type: Roll Channel Type: Strong Properties of semiconductor elements: protected gate Scope of delivery: 5 pcs. Eigenschaften von Halbleiterelementen protected gate Gehäuse SOT323 Marke TNE Polarisierung unipolar Hersteller DIODES INCORPORATED EAN 4065444328390 Montage SMD Drain-Source Spannung 20V Gate-Source Spannung ±6V Widerst im Leitungszust 0.3Ω Lieferumfang 5 Stk. Kanal-Art stark Herstellernummer 8515 Transistor-Typ N-MOSFET Verpackungs-Art B Drainstrom 1A Verlustleistung 0.29W Produktart sontiges

Price: 7.92 USD

Location: Erfurt

End Time: 2024-09-19T08:44:48.000Z

Shipping Cost: 0 USD